上海自(zi)動化(hua)儀表一廠SH2193G7EHYMEd防爆擴(kuo)散硅(gui)(gui)壓(ya)(ya)力變送器(qi) SH2188變送器(qi)由壓(ya)(ya)阻式傳(chuan)感(gan)器(qi)和信(xin)號(hao)(hao)轉(zhuan)換模塊組成(cheng)(cheng),傳(chuan)感(gan)器(qi)的核心部件為單(dan)晶硅(gui)(gui)片,當單(dan)晶硅(gui)(gui)片受壓(ya)(ya)時,本身的電(dian)(dian)阻率要發生變化(hua),通(tong)過半導(dao)體平(ping)面工藝在(zai)(zai)硅(gui)(gui)片上擴(kuo)散形(xing)成(cheng)(cheng)四個電(dian)(dian)阻,連(lian)接成(cheng)(cheng)電(dian)(dian)橋,在(zai)(zai)恒(heng)定的電(dian)(dian)流作用下,可輸(shu)出(chu)與壓(ya)(ya)力信(xin)號(hao)(hao)成(cheng)(cheng)正比(bi)的電(dian)(dian)壓(ya)(ya)信(xin)號(hao)(hao),信(xin)號(hao)(hao)轉(zhuan)換模塊將傳(chuan)感(gan)器(qi)的電(dian)(dian)壓(ya)(ya)信(xin)號(hao)(hao)經(jing)過處(chu)理,轉(zhuan)換成(cheng)(cheng)4~20mA標(biao)準信(xin)號(hao)(hao)。
查看詳細介紹上(shang)海(hai)自動化(hua)儀(yi)表(biao)一廠SH2192G6EHYMEd防(fang)爆(bao)擴(kuo)散(san)硅(gui)壓(ya)(ya)力變(bian)送器 SH2188變(bian)送器由壓(ya)(ya)阻式傳感器和信號(hao)(hao)轉換模(mo)塊(kuai)組(zu)成,傳感器的核(he)心部件為單晶硅(gui)片(pian),當單晶硅(gui)片(pian)受(shou)壓(ya)(ya)時(shi),本身的電(dian)(dian)阻率(lv)要發生變(bian)化(hua),通過半導體平面工藝在硅(gui)片(pian)上(shang)擴(kuo)散(san)形成四個電(dian)(dian)阻,連接成電(dian)(dian)橋,在恒定的電(dian)(dian)流(liu)作用(yong)下,可輸出與壓(ya)(ya)力信號(hao)(hao)成正(zheng)比的電(dian)(dian)壓(ya)(ya)信號(hao)(hao),信號(hao)(hao)轉換模(mo)塊(kuai)將傳感器的電(dian)(dian)壓(ya)(ya)信號(hao)(hao)經過處理,轉換成4~20mA標準(zhun)信號(hao)(hao)。
查看詳細介紹上海自(zi)動化(hua)儀表一廠SH2191G5EHYMEd防爆擴散硅壓(ya)力變送器 SH2188變送器由壓(ya)阻(zu)(zu)式傳(chuan)感(gan)器和信(xin)(xin)(xin)(xin)號(hao)(hao)轉換(huan)模塊(kuai)組成(cheng)(cheng)(cheng)(cheng),傳(chuan)感(gan)器的(de)(de)核心部件為單晶硅片(pian),當單晶硅片(pian)受壓(ya)時,本(ben)身的(de)(de)電(dian)阻(zu)(zu)率(lv)要(yao)發生變化(hua),通過(guo)半(ban)導體(ti)平面工藝(yi)在硅片(pian)上擴散形(xing)成(cheng)(cheng)(cheng)(cheng)四個(ge)電(dian)阻(zu)(zu),連(lian)接成(cheng)(cheng)(cheng)(cheng)電(dian)橋(qiao),在恒定的(de)(de)電(dian)流作用(yong)下,可(ke)輸出與壓(ya)力信(xin)(xin)(xin)(xin)號(hao)(hao)成(cheng)(cheng)(cheng)(cheng)正(zheng)比的(de)(de)電(dian)壓(ya)信(xin)(xin)(xin)(xin)號(hao)(hao),信(xin)(xin)(xin)(xin)號(hao)(hao)轉換(huan)模塊(kuai)將傳(chuan)感(gan)器的(de)(de)電(dian)壓(ya)信(xin)(xin)(xin)(xin)號(hao)(hao)經過(guo)處理,轉換(huan)成(cheng)(cheng)(cheng)(cheng)4~20mA標準信(xin)(xin)(xin)(xin)號(hao)(hao)。
查看詳細介紹上海自動化儀表一廠(chang)SH2190G4EHYMEd防爆(bao)擴(kuo)散硅壓(ya)(ya)(ya)力變(bian)(bian)送(song)器(qi) SH2188變(bian)(bian)送(song)器(qi)由壓(ya)(ya)(ya)阻(zu)式傳感(gan)器(qi)和(he)信號(hao)(hao)(hao)轉換模塊組成(cheng),傳感(gan)器(qi)的核(he)心(xin)部件為(wei)單(dan)晶(jing)硅片,當(dang)單(dan)晶(jing)硅片受壓(ya)(ya)(ya)時(shi),本身的電(dian)阻(zu)率要發(fa)生變(bian)(bian)化,通過半(ban)導體平面工藝在硅片上擴(kuo)散形成(cheng)四(si)個(ge)電(dian)阻(zu),連(lian)接(jie)成(cheng)電(dian)橋(qiao),在恒定的電(dian)流作用下,可輸(shu)出與壓(ya)(ya)(ya)力信號(hao)(hao)(hao)成(cheng)正比的電(dian)壓(ya)(ya)(ya)信號(hao)(hao)(hao),信號(hao)(hao)(hao)轉換模塊將傳感(gan)器(qi)的電(dian)壓(ya)(ya)(ya)信號(hao)(hao)(hao)經過處理(li),轉換成(cheng)4~20mA標準信號(hao)(hao)(hao)。
查看詳細介紹上海自動化儀表一(yi)廠(chang)SH2189G3EHYMEd防爆擴散硅(gui)壓(ya)(ya)力(li)變送器 SH2188變送器由壓(ya)(ya)阻式(shi)傳(chuan)(chuan)感(gan)器和信(xin)(xin)號(hao)轉(zhuan)換模(mo)塊(kuai)組成,傳(chuan)(chuan)感(gan)器的(de)核心(xin)部件為單(dan)(dan)晶硅(gui)片(pian),當單(dan)(dan)晶硅(gui)片(pian)受壓(ya)(ya)時,本身的(de)電(dian)(dian)(dian)阻率要發生變化,通過半導體(ti)平面(mian)工藝(yi)在(zai)硅(gui)片(pian)上擴散形(xing)成四個電(dian)(dian)(dian)阻,連接成電(dian)(dian)(dian)橋,在(zai)恒定的(de)電(dian)(dian)(dian)流(liu)作用下,可輸出與壓(ya)(ya)力(li)信(xin)(xin)號(hao)成正比(bi)的(de)電(dian)(dian)(dian)壓(ya)(ya)信(xin)(xin)號(hao),信(xin)(xin)號(hao)轉(zhuan)換模(mo)塊(kuai)將(jiang)傳(chuan)(chuan)感(gan)器的(de)電(dian)(dian)(dian)壓(ya)(ya)信(xin)(xin)號(hao)經過處(chu)理(li),轉(zhuan)換成4~20mA標準信(xin)(xin)號(hao)。
查看詳細介紹上海自(zi)動(dong)化(hua)儀表一廠SH2188G2EHYMEd防爆擴散硅壓力變(bian)送(song)(song)器 SH2188變(bian)送(song)(song)器由壓阻式(shi)傳(chuan)(chuan)感(gan)器和信(xin)號(hao)(hao)轉(zhuan)(zhuan)換模(mo)塊(kuai)組成(cheng),傳(chuan)(chuan)感(gan)器的(de)(de)核心部(bu)件為單晶硅片(pian),當(dang)單晶硅片(pian)受壓時(shi),本身(shen)的(de)(de)電(dian)阻率(lv)要發生(sheng)變(bian)化(hua),通過(guo)半導(dao)體平(ping)面工藝在(zai)硅片(pian)上擴散形成(cheng)四(si)個電(dian)阻,連接成(cheng)電(dian)橋,在(zai)恒(heng)定(ding)的(de)(de)電(dian)流作用下,可輸出與壓力信(xin)號(hao)(hao)成(cheng)正(zheng)比的(de)(de)電(dian)壓信(xin)號(hao)(hao),信(xin)號(hao)(hao)轉(zhuan)(zhuan)換模(mo)塊(kuai)將傳(chuan)(chuan)感(gan)器的(de)(de)電(dian)壓信(xin)號(hao)(hao)經過(guo)處理,轉(zhuan)(zhuan)換成(cheng)4~20mA標準信(xin)號(hao)(hao)。
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